منابع مشابه
Compliant substrate epitaxy: Au on MoS2
Yuzhi Zhou,1,2 Daisuke Kiriya,3,2 E. E. Haller,1,2 Joel W. Ager III,1,2 Ali Javey,3,2 and D. C. Chrzan1,2 1Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA 2Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA 3Electrical Engineering and Computer Sciences, University of California, Berkeley,...
متن کاملWirelike Growth of Si on an Au/Si(111) Substrate by Gas Source Molecular Beam Epitaxy
Ultrafine Si nanowires are grown on an Au/Si(111) substrate using gas source molecular beam epitaxy. These Si wires with crosssectional dimensions between 50 nm and 2 μm grow mainly with a growth axis parallel to the <111> direction. The growth rate of nanowires is independent of their diameters, i.e., nanowires with different diameters have the same growth rate. From the dependence of source g...
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In this study, defect-free zinc blende GaAs nanowires on Si (111) by molecular beam epitaxy (MBE) growth are systematically studied through Au-assisted vapor-liquid-solid (VLS) method. The morphology, density, and crystal structure of GaAs nanowires were investigated as a function of substrate temperature, growth time, and As/Ga flux ratio during MBE growth, as well as the thickness, annealing ...
متن کاملLattice parameter accommodation between GaAs(111) nanowires and Si(111) substrate after growth via Au-assisted molecular beam epitaxy
Using out-of-plane and in-plane X-ray diffraction techniques, we have investigated the structure at the interface between GaAs nanowires [NWs] grown by Au-assisted molecular beam epitaxy and the underlying Si(111) substrate. Comparing the diffraction pattern measured at samples grown for 5, 60, and 1,800 s, we find a plastic strain release of about 75% close to the NW-to-substrate interface eve...
متن کاملGrowth of Si whiskers on Au/Si(1 1 1) substrate by gas source molecular beam epitaxy (MBE)
The vapor—liquid—solid growth of Si whiskers from disilane has been studied in a gas source MBE system. The wire-like Si crystals are grown on Si(1 1 1) substrates in a temperature range of 600—800°C, a disilane pressure between 1]10~4 and 1]10~7 Torr, and using Au as a growth-promoting agent. The morphology of the Si whiskers is investigated. It is found that the growth rate of the vertical wi...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2016
ISSN: 2469-9950,2469-9969
DOI: 10.1103/physrevb.93.054106